26NM60N datasheet(3/14 Pages) STMICROELECTRONICS

Part #	26NM60N

Description	N-channel 600 V, 0.160 廓, 19 A PowerFLAT??8x8 HV ultra low gate charge MDmesh??II Power MOSFET

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STL26NM60N

Electrical ratings

Doc ID 18472 Rev 2

3/14

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

600

V

VGS

Gate-source voltage

± 25

V

ID

(1)

1.

The value is rated according to Rthj-case

Drain current (continuous) at TC = 25 °C

19

A

ID

(1)

Drain current (continuous) at TC = 100 °C

12

A

ID

(2)

2.

When mounted on FR-4 board of inch², 2oz Cu

Drain current (continuous) at Tamb = 25 °C

2.7

A

ID

(2)

Drain current (continuous) at Tamb = 100 °C

1.7

A

IDM

(2),(3)

Drain current (pulsed)

10.8

A

PTOT

(2)

Total dissipation at Tamb = 25 °C

3

W

PTOT

(1)

Total dissipation at TC = 25 °C

125

W

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

7.5

A

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

400

mJ

dv/dt (3)

3.

ISD ≤ 19 A, di/dt ≤ 400 A/µs, VDS peak≤V(BR)DSS, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

15

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

0.83

°C/W

Rthj-amb

(1)

1.

When mounted on 1inch² FR-4 board, 2 oz Cu

Thermal resistance junction-amb max

45

°C/W

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