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GA200SA60S Datasheet(PDF) 3 Page - Vishay Siliconix |
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GA200SA60S Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 9 page GA200SA60SP Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A Vishay Semiconductors Document Number: 94363 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of Fundamental) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector to Emitter Voltage vs. Junction Temperature For both: Duty cycle: 50 % T J = 125 °C T sink = 90 °C Gate drive as specified Power dissipation = 140 W 0 250 0.1 f - Frequency (kHz) 1 10 100 200 150 100 50 Clamp voltage: 80 % of rated Triangular wave: I 60 % of rated voltage Ideal diodes Square wave: I 1 10 100 1000 0.5 1.0 1.5 2.0 2.5 VCE - Collector to Emitter Voltage (V) V GE = 15 V 20 µs pulse width T J = 150 °C T J = 25 °C 10 100 1000 567 VGE - Gate to Emitter Voltage (V) T J = 150 °C T J = 25 °C V CC = 50 V 5 µs pulse width 0 80 120 160 40 20 100 140 60 0 50 100 150 250 200 300 350 Maximum DC Collector Current (A) DC 1 2 3 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ - Junction Temperature (°C) V GE = 15 V 80 µs pulse width I C = 400 A I C = 200 A I C = 100 A |
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