GA200SA60SP

Insulated Gate Bipolar Transistor

Vishay Semiconductors

Document Number: 94363

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Revision: 22-Jul-10

3

Fig. 1 - Typical Load Current vs. Frequency

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Maximum Collector Current vs. Case Temperature

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

For both:

Duty cycle: 50 %

T

T

Gate drive as specified

Power dissipation = 140 W

0

250

0.1

f - Frequency (kHz)

1

10

100

200

150

100

50

Clamp voltage:

80 % of rated

Triangular wave:

I

60 % of rated

voltage

Ideal diodes

Square wave:

I

1

10

100

1000

0.5

1.0

1.5

2.0

2.5

V

20 µs pulse width

T

T

10

100

1000

567

T

T

V

5 µs pulse width

0

80

120

160

40

20

100

140

60

0

50

100

150

250

200

300

350

Maximum DC Collector Current (A)

DC

1

2

3

- 60 - 40 - 20 0

20 40 60 80 100 120 140 160

V

80 µs pulse width

I

I

I