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GW35HF60WDB Datasheet(PDF) 6 Page - STMicroelectronics |
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GW35HF60WDB Datasheet(HTML) 6 Page - STMicroelectronics |
6 / 12 page Electrical characteristics STGW35HF60WD 6/12 Doc ID 15592 Rev 5 Figure 8. Gate charge vs. gate-emitter voltage Figure 9. Capacitance variations Figure 10. Switching losses vs temperature Figure 11. Switching losses vs. gate resistance Figure 12. Switching losses vs. collector current Figure 13. Turn-off SOA 0 4 8 12 16 0 30 60 90 120 150 QG (nC) VGE (V) VCC = 400 V IC = 20 A 0 1000 2000 3000 4000 5000 0 102030 40 50 VCE (V) C (pF) f = 1 MHz VGE = 0 Cies Coes Cres 150 200 250 300 350 400 450 25 50 75 100 125 TJ (°C) E (µJ) VCE= 400 V, VGE= 15 V IC = 20 A, RG =10 Ω EON EOFF 0 500 1000 1500 2000 0 60 120 180 240 Rg (Ω) E (µJ) EON EOFF VCE= 400 V, VGE= 15 V IC = 20 A, TJ = 125 °C 0 200 400 600 800 1000 10 15 20 25 30 35 40 IC (A) E (µJ) VCE= 400 V, VGE= 15 V RG = 10 Ω, TJ = 125 °C EON EOFF 0.1 1 10 100 1000 1 10 100 1000 VCE (V) IC (A) VGE= 15 V, RG = 10 Ω TC = 150 °C |
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