BDT64C datasheet(1/2 Pages) ISC

Part #	BDT64C

Description	isc Silicon PNP Darlington Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

BDT64/A/B/C

DESCRIPTION

·Collector Current -IC= -12A

·High DC Current Gain-hFE= 1000(Min)@ IC= -5A

·Complement to Type BDT65/A/B/C

APPLICATIONS

·Designed for audio output stages and general purpose

amplifier applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDT64

-60

BDT64A

-80

BDT64B

-100

VCER

Collector-Emitter

Voltage

BDT64C

-120

V

BDT64

-60

BDT64A

-80

BDT64B

-100

VCEO

Collector-Emitter

Voltage

BDT64C

-120

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-12

A

ICM

Collector Current-Peak

-20

A

IB

B

Base Current-Continuous

-0.5

A

PC

Collector Power Dissipation

@ TC=25℃

125

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1

℃/W

isc Website：www.iscsemi.cn

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