BD675 datasheet(1/3 Pages) ISC

Part #	BD675

Description	Silicon NPN Darligton Power Transistors

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Darligton Power Transistors

BD675/BD677/BD679

DESCRIPTION

・

・With TO-126 package

・Complement to type BD676/678/680

・DARLINGTON

・High DC current gain

APPLICATIONS

・For use as output devices in

complementary general–purpose

amplifier applications

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BD675

45

BD677

60

VCBO

Collector-base voltage

BD679

Open emitter

80

V

BD675

45

BD677

60

VCEO

Collector-emitter voltage

BD679

Open base

80

V

VEBO

Emitter -base voltage

Open collector

5

V

IC

Collector current

4

A

ICM

Collector current-Peak

7

A

IB

Base current

0.1

A

PC

Collector power dissipation

TC=25℃

40

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-a

Thermal resistance from junction to ambient

100

K/W

Rth j-mb

Thermal resistance from junction to mounting base

3.12

K/W

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