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2SD2559 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2559 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2559 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 300mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.5 V ICBO Collector Cutoff Current VCB= 1500V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 83 250 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 10 30 hFE-2 DC Current Gain IC= 6A; VCE= 5V 5 9 VECF C-E Diode Forward Voltage IF= 6A 1.8 V fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 2 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0MHz 125 pF Switching Times ts Storage Time 8.5 μs tf Fall Time ICP= 6A, IB1(end)= 1.2A, fH= 15.75kHz 0.7 μs isc Website:www.iscsemi.cn 2 |
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