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LE25FU106B Datasheet(PDF) 5 Page - Sanyo Semicon Device

Part # LE25FU106B
Description  1M-bit (128K횞8) Serial Flash Memory
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LE25FU106B Datasheet(HTML) 5 Page - Sanyo Semicon Device

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LE25FU106B
No.A1140-5/21
Device Operation
The LE25FU106B features electrical on-chip erase functions using a single 2.5V power supply, that have been added to
the EPROM functions of the industry standard that support serial interfaces. Interfacing and control are facilitated by
incorporating the command registers inside the chip. The read, erase, program and other required functions of the
device are executed through the command registers. The command addresses and data input in accordance with "Table
2 Command Settings" are latched inside the device in order to execute the required operations. "Figure 3 Serial Input
Timing" shows the timing waveforms of the serial data input. First, at the falling CS edge the device is selected, and
serial input is enabled for the commands, addresses, etc. These inputs are introduced internally in sequence starting with
bit 7 in synchronization with the rising SCK edge. At this time, output pin SO is in the high-impedance state. The
output pin is placed in the low-impedance state when the data is output in sequence starting with bit 7 synchronized to
the falling clock edge during read, status register read and silicon ID. Refer to "Figure 4 Serial Output Timing" for the
serial output timing.
The LE25FU106B supports both serial interface SPI mode 0 and SPI mode 3. At the falling CS edge, SPI mode 0 is
automatically selected if the logic level of SCK is low, and SPI mode 3 is automatically selected if the logic level of
SCK is high.
Figure 3 Serial Input Timing
Figure 4 Serial Output Timing
High Impedance
tDH
tCPH
tDS
tCSH
tCSS
CS
DATA VALID
SO
SI
SCK
High Impedance
tCLH
tCLS
tCLHI
tCLLO
tHO
tCHZ
tCLZ
SI
tV
CS
SO
SCK
DATA VALID


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