DG9636EN-T1-E4 datasheet(2/10 Pages) VISHAY

Part #	DG9636EN-T1-E4

Description	Dual SPDT Analog Switch

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 65159

S10-2012-Rev. B, 06-Sep-10

Vishay Siliconix

DG9636

Notes:

• - 40 °C to 85 °C datasheet limits apply.

Notes:

a. Signals on SX, DX, or AX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.

b. All leads welded or soldered to PC board.

c. Derate 2.6 mW/°C above 70 °C.

d. Manual soldering with iron is not recommended for leadless components. The miniQFN-10 is a leadless package. The end of the lead terminal

is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be

guaranteed and is not required to ensure adequate bottom side solder interconnection.

ORDERING INFORMATION

Temp. Range

Package

Part Number

- 40 °C to 125 °C

10 pin miniQFN

DG9636EN-T1-E4

- 40 °C to 85 °C

10 pin miniQFN

DG9636DN-T1-E4

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Limit

Unit

V+ to GND

14

V

Digital Inputsa, VS, VD

(V+) + 0.3 or 30 mA, whichever occurs first

Continuous Current (Any Terminal)

30

mA

Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle)

100

Storage Temperature

- 65 to 150

°C

Power Dissipation (Package)b

10 pin miniQFNc, d

208

mW

Thermal Resistance (Package)b

10 pin miniQFN

357

°C/W

SPECIFICATIONS FOR DUAL SUPPLIES

Parameter

Symbol

Test Conditions

Unless Otherwise Specified

V+ = 12 V, VA0, A1 = 1.65 V, 0.5 V

a

Temp.b

Typ.c

- 40 °C to 125 °C - 40 °C to 85 °C

Unit

Min.d

Max.d

Min.d

Max.d

Analog Switch

Analog Signal Rangee

VANALOG

Full

12

V

On-Resistance

RDS(on)

IS = 1 mA, VD = + 11.3 V

Room

Full

83

110

140

110

125

Ω

On-Resistance Match

ΔRON

IS = 1 mA, VD = + 11.3 V

Room

Full

24

9

4

6

On-Resistance Flatness

RFLATNESS IS = 1 mA, VD = 0.7 V, 6.5 V, 11.3 V

Room

Full

33

45

55

45

50

Switch Off

Leakage Current

IS(off)

V+ = 12 V,

VD = 1 V/11 V, VS = 11 V/1 V

Room

Full

± 0.01

- 1

- 18

1

18

- 1

- 2

1

2

nA

ID(off)

Room

Full

± 0.01

- 1

- 18

1

18

- 1

- 2

1

2

Channel On

Leakage Current

ID(on)

V+ = 12 V,

VD = VS 11 V/1 V

Room

Full

± 0.01

- 1

- 18

1

18

- 1

- 2

1

2

Digital Control

Input Current, VIN Low

IIL

VAX = 0.5 V

Full

0.005

- 0.1

0.1

- 0.1

0.1

µA

Input Current, VIN High

IIH

VAX = 1.65 V

Full

0.005

- 0.1

0.1

- 0.1

0.1

Input Capacitancee

CIN

f = 1 MHz

Room

3

pF

Dynamic Characteristics

Turn-On Time

tON

RL = 300 Ω, CL = 35 pF

see figure 1, 2

Room

Full

30

70

90

70

80

ns

Turn-Off Time

tOFF

Room

Full

15

55

75

55

65

Break-Before-Make

tBBM

Room

Full

15

5

2

5

2

Charge Injectione

QINJ

Vg = 0 V, Rg = 0 Ω, CL = 1 nF

Room

23.5

pC

Off Isolatione

OIRR

RL = 50 Ω, CL = 5 pF, f = 10 MHz

Room

- 58

dB

Bandwidthe

BW

RL = 50 Ω

Room

720

MHz

Channel-to-Channel

Crosstalke

XTALK

RL = 50 Ω, CL = 5 pF, f = 10 MHz

Room

- 67

dB

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