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| 2SD1594 |
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Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1594 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=5A , IB1=0.5A,L=1mH 60 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 0.6 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=100V ;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.5A ; VCE=5V 40 hFE-2 DC current gain IC=3A ; VCE=5V 40 240 hFE-3 DC current gain IC=5A ; VCE=5V 20 Switching times ton Turn-on time 0.5 μs ts Storage time 0.5 μs tf Fall time IC=5A ;IB1=0.5A IB2=-0.5A; VCC=50V RL=10Ω 1.5 μs hFE-2 Classifications R O Y 40-80 70-140 120-240 |
