DG3409DB-T2-E1 datasheet(6/14 Pages) VISHAY

Part #	DG3409DB-T2-E1

Description	Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 72858

S11-0303-Rev. E, 28-Feb-11

Vishay Siliconix

DG3408, DG3409

Notes:

a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.

b. Room = 25 °C, Full = as determined by the operating temperature suffix.

c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.

d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

e. Guaranteed by design, not subject to production test.

f. VIN = input voltage to perform proper function.

g.

R

DON = RDON Max - RDON Min.

h. Worst case isolation occurs on Channel 4 due to proximity to the drain pin.

i. RDON flatness is measured as the difference between the minimum and maximum measured values across a defined Analog signal.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (Single Supply 3 V)

Parameter

Symbol

Test Conditions

Unless Otherwise Specified

V+ = 3 V, ± 10 %

, V- = 0 V

VEN = 0.4 V or 1.8 V

f

Tempb

Limits

- 40 °C to 85 °C

Unit

Minc

Typd

Maxc

Analog Switch

Analog Signal Rangee

VANALOG

Full

0

3

V

On-Resistance

RON

V+ = 2.7 V, VD = 0.5 or 2.2 V, IS = 5 mA

Room

Full

12

25.5

26.5



RON Match Between

Channelsg

R

ON

V+ = ± 2.7 V, VD = 0.5 V or 2.2 V, IS = 5 mA

Room

3.6

On-Resistance Flatnessi

RON

Flatness

Room

13

Switch Off Leakage Currenta

IS(off)

V+ = 3.3 V

VS = 2 or 1 V, VD = 1 or 2 V

Room

Full

- 2

- 20

2

20

nA

ID(off)

Room

Full

- 2

- 20

2

20

Channel On Leakage Currenta

ID(on)

V+ = 3.3 V

VD = VS = 1 or 2 V, sequence each switch on

Room

Full

- 2

- 20

2

20

Digital Control

Logic High Input Voltage

VINH

Full

1.8

V

Logic Low Input Voltage

VINL

Full

0.4

Input Currenta

IIN

VAX = VEN = 1.8 V or 0.4 V

Full

- 1

1

µA

Dynamic Characteristics

Transition Time

tTRANS

VS1 = 1.5 V, VS8 = 0 V, (DG3408)

VS1b = 1.5 V, VS4b = 0 V, (DG3409)

see figure 2

Room

Full

140

165

182

ns

Break-Before-Make Time

tBBM

VS(all) = VDA = 1.5 V

see figure 4

Room

Full

263

Enable Turn-On Time

tON(EN)

VAX = 0 V, VS1 = 1.5 V (DG3408)

VAX = 0 V, VS1b = 1.5 V (DG3409)

see figure 3

Room

Full

140

162

178

Enable Turn-Off Time

tOFF(EN)

Room

Full

76

97

104

Charge Injectione

Q

CL = 1 nF, RGEN = 0, VGEN = 0 V

Room

7

pC

Off Isolatione, h

OIRR

f = 100 kHz, RL = 1 k

Room

- 81

dB

Crosstalke

XTALK

Room

- 85

Source Off Capacitancee

CS(off)

f = 1 MHz, VS = 0 V, VEN = 1.8 V

DG3408

Room

23

pF

DG3409

Room

25

Drain Off Capacitancee

CD(off)

f = 1 MHz, VD = 0 V, VEN = 1.8 V

DG3408

Room

230

DG3409

Room

120

Drain On Capacitancee

CD(on)

f = 1 MHz, VD = 0 V, VEN = 0 V

DG3408

Room

256

DG3409

Room

147

Power Supplies

Power Supply Current

I+

VEN = VA = 0 V or V+

Room

1.0

µA

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