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2SC5763 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2SC5763
Description  isc Silicon NPN Power Transistors
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC5763 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
2SC5763
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA; RBE= ∞
400
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
700
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
8
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
B
0.8
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
B
1.5
V
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10
μA
hFE-1
DC Current Gain
IC= 0.8A; VCE= 5V
20
50
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
10
hFE-3
DC Current Gain
IC= 1mA; VCE= 5V
10
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
80
pF
fT
Current-Gain—Bandwidth Product
IC= 0.8A; VCE= 10V
17
MHz
Switching times
ton
Turn-on Time
0.5
μs
tstg
Storage Time
2.5
μs
tf
Fall Time
IC= 5A, IB1= 1A; IB2= -2A;
RL= 40Ω; VCC= 200V
0.25
μs
hFE-1 Classifications
M
N
20-40
30-50
isc Website：www.iscsemi.cn
2


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