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DG447 Datasheet(PDF) 3 Page - Vishay Siliconix |
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DG447 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 13 page Document Number: 73854 S11-1336-Rev. D, 04-Jul-11 www.vishay.com 3 Vishay Siliconix DG447, DG448 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONSa Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V VIN = 2.4 V, 0.8 V f Temp.b D Suffix - 40 °C to 85 °C Unit Min.d Typ.c Max.d Analog Switch Analog Signal Rangee VANALOG Full 0 12 V Drain-Source On-Resistance RON Ino/nc = - 10 mA, VCOM = 8 V V+ = 10.8 V Room Full 32 45 60 On-Resistance Flatness RON Flatness Ino/nc = 10 mA, VCOM = 2, 6, 8 V V+ = 10.8 V Room Full 26 8 Dynamic Characteristics Turn-On Time tON VNO, NC = ± 10 V, RL = 300 , CL = 35 pF Room Full 140 175 225 nS Turn-Off Time tOFF Room Full 50 120 150 Charge Injectione Q CL = 10 nF, Vgen = 0 V, Rgen = 0 Room 12 pC Power Supplies Positive Supply Current I+ V+ = 13.2 V, VIN = 0 V, 5 V Room Full 22 50 75 µA |
Similar Part No. - DG447_11 |
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Similar Description - DG447_11 |
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