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DG412HSDN-T1-E4 Datasheet(PDF) 3 Page - Vishay Siliconix |
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DG412HSDN-T1-E4 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 17 page Document Number: 72053 S11-0179-Rev. C, 07-Feb-11 www.vishay.com 3 Vishay Siliconix DG411HS, DG412HS, DG413HS Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6 mW/°C above 25 °C. d. Derate 7.6 mW/°C above 75 °C. e. Derate 12 mW/°C above 75 °C. f. Derate 23.5 mW/°C above 70 °C. ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit V+ to V- 44 V GND to V- 25 VL (GND - 0.3) to (V+) + 0.3 Digital Inputsa, VS, VD (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first Continuous Current (Any terminal) 30 mA Peak Current, S or D (Pulsed 1 ms, 10 % duty cycle) 100 Storage Temperature (AK, AZ Suffix) - 65 to 150 °C (DJ, DY, DN Suffix) - 65 to 125 Power Dissipation (Package)b 16-Pin Plastic DIPc 470 mW 16-Pin Narrow SOICd 600 16-Pin CerDIPe 900 LCC-20e 900 16-Pin (4 x 4 mm) QFNf 1880 SPECIFICATIONSa Parameter Symbol Test Conditions Unless Specified V+ = 15 V, V- = - 15 V VL = 5 V, VIN = 2.4 V, 0.8 V f Temp.b Typ.c A Suffix - 55 °C to 125 °C D Suffix - 40 °C to 85 °C Unit Min.d Max.d Min.d Max.d Analog Switch Analog Signal Rangee VANALOG Full - 15 15 - 15 15 V Drain-Source On-Resistance RDS(on) V+ = 13.5 V, V- = - 13.5 V IS = - 10 mA, VD = ± 8.5 V Room Full 25 35 45 35 45 Switch Off Leakage Current IS(off) V+ = 16.5 V, V- = - 16.5 V VD = ± 15.5 mA, VS = ± 15.5 V Room Full ± 0.1 - 0.25 - 20 0.25 20 - 0.25 - 5 0.25 5 nA ID(off) Room Full ± 0.1 - 0.25 - 20 0.25 20 - 0.25 - 5 0.25 5 Channel On Leakage Current ID(on) V+ = 16.5 V, V- = - 16.5 V VD = VS = ± 15.5 V Room Full ± 0.1 - 0.4 - 40 0.4 40 - 0.4 - 10 0.4 10 Digital Control Input Current, VIN Low IIL VIN under test = 0.8 V Full 0.005 - 0.5 0.5 - 0.5 0.5 µA Input Current, VIN High IIH VIN under test = 2.4 V Full 0.005 - 0.5 0.5 - 0.5 0.5 Input Capacitancee CIN f = 1 MHz Room 5 pF Dynamic Characteristics Turn-On Time tON RL = 300 , CL = 35 pF VS = ± 10 V, see figure 2 Room Full 68 105 127 105 116 ns Turn-Off Time tOFF Room Full 42 80 94 80 90 Break-Before-Make Time Delay tD DG413HS only, VS = 10 V RL = 300 , CL = 35 pF Room 20 Charge Injectione QVg = 0 V, Rg = 0 , CL = 10 nF Room 22 pC |
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