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DG211BDY-T1-E3 Datasheet(PDF) 6 Page - Vishay Siliconix |
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DG211BDY-T1-E3 Datasheet(HTML) 6 Page - Vishay Siliconix |
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6 / 13 page  www.vishay.com 6 Document Number: 70040 S11-0179-Rev. J, 07-Feb-11 Vishay Siliconix DG211B, DG212B TEST CIRCUITS Figure 2. Switching Time 50 % 0 V 3 V tOFF tON VO tr < 20 ns tf < 20 ns Logic Input Switch Output 90 % CL 35 pF RL 1 k Ω VO = VS RL + rDS(on) RL VS = + 2 V VO V- V+ IN S D 3 V - 15 V GND + 15 V Figure 3. Off Isolation S IN RL D Rg = 50 Ω VS VO 0V, 2.4 V Off Isolation = 20 log VS VO V+ - 15 V GND V- C C + 15 V Figure 4. Channel-to-Channel Crosstalk IN1 VO + 15 V - 15 V GND RL V+ V- NC XTALK Isolation = 20 log C VS C VO 0 V, 2.4 V 50 Ω VS S1 IN2 S2 Rg = 50 Ω D1 D2 C = RF bypass 0 V, 2.4 V Figure 5. Charge Injection CL 1000 pF Vg 3 V D V+ V- Rg - 15 V GND IN S VO + 15 V VO ΔVO INX ON ON OFF ΔVO = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x ΔVO |
Similar Part No. - DG211BDY-T1-E3 |
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Similar Description - DG211BDY-T1-E3 |
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