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CPV363M4UPBF Datasheet(PDF) 3 Page - Vishay Siliconix |
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CPV363M4UPBF Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 11 page Document Number: 94486 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 01-Sep-08 3 CPV363M4UPbF IGBT SIP Module (Ultrafast IGBT) Vishay High Power Products SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Qg IC = 6.8 A VCC = 400 V See fig. 8 -53 79 nC Gate to emitter charge (turn-on) Qge -7.7 12 Gate to collector charge (turn-on) Qgc -21 31 Turn-on delay time td(on) TJ = 25 °C IC = 6.8 A, VCC = 480 V VGE = 15 V, RG = 23 Ω Energy losses include “tail” and diode reverse recovery. See fig. 9, 10, 11, 18 -43- ns Rise time tr -14- Turn-off delay time td(off) -95 140 Fall time tf -83 190 Turn-on switching loss Eon -0.17- mJ Turn-off switching loss Eoff -0.15- Total switching loss Ets - 0.32 0.45 Turn-on delay time td(on) TJ = 150 °C IC = 6.8 A, VCC = 480 V VGE = 15 V, RG = 23 Ω Energy losses include “tail” and diode reverse recovery See fig. 9, 10, 11, 18 -41- ns Rise time tr -16- Turn-off delay time td(off) - 110 - Fall time tf - 230 - Total switching loss Ets -0.52- mJ Input capacitance Cies VGE = 0 V VCC = 30 V ƒ = 1.0 MHz See fig. 7 - 1100 - pF Output capacitance Coes -73- Reverse transfer capacitance Cres -14- Diode reverse recovery time trr TJ = 25 °C See fig. 14 IF = 12 A VR = 200 V dI/dt = 200 A/µs -42 60 ns TJ = 125 °C - 83 120 Diode peak reverse recovery charge Irr TJ = 25 °C See fig. 15 -3.5 6.0 A TJ = 125 °C - 5.6 10 Diode reverse recovery charge Qrr TJ = 25 °C See fig. 16 -80 180 nC TJ = 125 °C - 220 600 Diode peak rate of fall of recovery during tb dI(rec)M/dt TJ = 25 °C See fig. 17 - 180 - A/µs TJ = 125 °C - 116 - |
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