Document Number: 94486

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

Revision: 01-Sep-08

3

CPV363M4UPbF

IGBT SIP Module

(Ultrafast IGBT)

Vishay High Power Products

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Total gate charge (turn-on)

See fig. 8

-53

79

nC

Gate to emitter charge (turn-on)

-7.7

12

Gate to collector charge (turn-on)

-21

31

Turn-on delay time

Energy losses include “tail” and diode

reverse recovery.

See fig. 9, 10, 11, 18

-43-

ns

Rise time

-14-

Turn-off delay time

-95

140

Fall time

-83

190

Turn-on switching loss

-0.17-

mJ

Turn-off switching loss

-0.15-

Total switching loss

-

0.32

0.45

Turn-on delay time

Energy losses include “tail” and

diode reverse recovery

See fig. 9, 10, 11, 18

-41-

ns

Rise time

-16-

Turn-off delay time

-

110

-

Fall time

-

230

-

Total switching loss

-0.52-

mJ

Input capacitance

ƒ = 1.0 MHz

See fig. 7

-

1100

-

pF

Output capacitance

-73-

Reverse transfer capacitance

-14-

Diode reverse recovery time

See fig. 14

dI/dt = 200 A/µs

-42

60

ns

-

83

120

Diode peak reverse recovery charge

See fig. 15

-3.5

6.0

A

-

5.6

10

Diode reverse recovery charge

See fig. 16

-80

180

nC

-

220

600

Diode peak rate of fall of recovery

See fig. 17

-

180

-

A/µs

-

116

-