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LB1668 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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LB1668 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 8 page No. 4944-2/8 LB1668, LB1668M, LB1667, LB1667M Parameter Symbol Conditions Ratings Unit Input current range ICC 6.0 to 50 mA Common-mode input voltage range VICM 0 to VIN –1.5 V Allowable Operating Ranges at Ta = 25°C Parameter Symbol Conditions Ratings Unit min typ max Output limit voltage VOLM1 Z1, Z2 open 54 57 60 V VOLM2 Z1, Z2 short 31 33 35 V Vosat1 IO = 0.5 A 0.95 1.2 V Output saturation voltage Vosat2 IO = 1.0 A 1.15 1.5 V Vosat3 IO = 1.5 A 1.4 2.0 V VIN voltage VIN ICC = 7.0 mA 6.4 6.7 7.0 V Amplifier input offset voltage VOFF –7.0 0 +7.0 mV Amplifier input bias current IBA –250 nA RD output saturation voltage VRDsat IRD = 5 mA* 0.1 0.3 V FG output saturation voltage VFG sat IFG = 5 mA* 0.1 0.3 V C outflow current IC1 2.1 3.0 3.9 μA C discharge current IC2 0.31 0.44 0.59 μA Comparator input threshold voltage VTH1 0.77 0.8VIN 0.83 V VTH2 0.42 0.45VIN 0.48 V Thermal shutdown current operating temperature TSD Design target value 180 °C Thermal shutdown circuit hysteresis ΔTSD Design target value 40 °C Electrical Characteristics at Ta = 25°C, ICC = 10 mA Parameter Symbol Conditions Ratings Unit Maximum input current ICC max t ≤ 20 ms 200 mA Output voltage VOUT Internal V Output current IOUT 1.5 A Output minus current IOM –50 mA RD/FG influx current IRD/IFG 10 mA RD/FG voltage VRD/VFG 30 V LB1667M, 1668M: Mounted on a printed circuit board 0.8 W Allowable power dissipation Pd max (20 × 15 × 1.5 mm3, glass epoxy) LB1667, 1668 1.1 W Operating temperature Topr –30 to +80 °C Storage temperature Tstg –55 to +150 °C Specifications Absolute Maximum Ratings at Ta = 25°C Note: * RD output: LB1668/M, FG output: LB1667/M |
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