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BYT54A Datasheet(PDF) 1 Page - Vishay Siliconix |
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BYT54A Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Document Number: 86031 For technical questions within your region, please contact one of the following: www.vishay.com Rev. 1.7, 25-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 115 Fast Avalanche Sinterglass Diode BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M Vishay Semiconductors MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition APPLICATIONS • Very fast rectification and switching diodes 949539 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYT54A VR = 50 V; IFAV = 1.25 A SOD-57 BYT54B VR = 100 V; IFAV = 1.25 A SOD-57 BYT54D VR = 200 V; IFAV = 1.25 A SOD-57 BYT54G VR = 400 V; IFAV = 1.25 A SOD-57 BYT54J VR = 600 V; IFAV = 1.25 A SOD-57 BYT54K VR = 800 V; IFAV = 1.25 A SOD-57 BYT54M VR = 1000 V; IFAV = 1.25 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT Reverse voltage = repetitive peak reverse voltage See electrical characteristics BYT54A VR = VRRM 50 V BYT54B VR = VRRM 100 V BYT54D VR = VRRM 200 V BYT54G VR = VRRM 400 V BYT54J VR = VRRM 600 V BYT54K VR = VRRM 800 V BYT54M VR = VRRM 1000 V Peak forward surge current tp = 10 ms, half sine wave IFSM 30 A Average forward current On PC board IFAV 0.75 A l = 10mm IFAV 1.25 A Non repetitive reverse avalanche energy I(BR)R = 0.4 A BYT54J ER 10 mJ BYT54K ER 10 mJ BYT54M ER 10 mJ Junction and storage temperature range Tj = Tstg - 55 to + 175 °C |
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