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ECH8660 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # ECH8660
Description  General-Purpose Switching Device Applications
Download  6 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ECH8660 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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ECH8660
No. A1358-2/6
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Forward Transfer Admittance
| yfs |
VDS=10V, ID=2A
1
1.66
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=2A, VGS=10V
45
59
RDS(on)2
ID=1A, VGS=4.5V
85
119
RDS(on)3
ID=1A, VGS=4V
110
155
Input Capacitance
Ciss
VDS=10V, f=1MHz
240
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
45
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
30
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
6.2
ns
Rise Time
tr
See specified Test Circuit.
11
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
17
ns
Fall Time
tf
See specified Test Circuit.
7.5
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=4.5A
4.4
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=4.5A
1.1
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=4.5A
0.64
nC
Diode Forward Voltage
VSD
IS=4.5A, VGS=0V
0.84
1.2
V
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0V
--1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.3
V
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--2A
2.5
4.2
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--2A, VGS=--10V
45
59
RDS(on)2
ID=--1A, VGS=--4.5V
71
100
RDS(on)3
ID=--1A, VGS=--4V
82
115
Input Capacitance
Ciss
VDS=--10V, f=1MHz
430
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
105
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
75
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
7.5
ns
Rise Time
tr
See specified Test Circuit.
26
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
45
ns
Fall Time
tf
See specified Test Circuit.
35
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--4.5A
10
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--4.5A
2.0
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--4.5A
2.5
nC
Diode Forward Voltage
VSD
IS=--4.5A, VGS=0V
--0.85
--1.2
V


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