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BAT54A-V Datasheet(PDF) 1 Page - Vishay Siliconix |
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BAT54A-V Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page BAT54-V, BAT54A-V, BAT54C-V, BAT54S-V Document Number 85508 Rev. 1.7, 16-Jul-10 Vishay Semiconductors www.vishay.com 1 Top View Top View BAT54-V BAT54C-V BAT54A-V BAT54S-V 18034 1 3 1 3 1 3 1 2 2 2 2 3 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Small Signal Schottky Diodes, Single and Dual Features • These diodes feature very low turn-on voltage and fast switching • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Mechanical Data Case: SOT-23 Weight: approx. 8.8 mg Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/3K per 7" reel (8 mm tape), 15K/box Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Note 1) Device on fiberglass substrate, see layout on next page. Thermal Characteristics Tamb = 25 °C, unless otherwise specified Note 1) Device on fiberglass substrate, see layout on next page. Part Ordering code Type marking Remarks BAT54-V BAT54-V-GS18 or BAT54-V-GS08 L4 Tape and reel BAT54A-V BAT54A-V-GS18 or BAT54A-V-GS08 L42 Tape and reel BAT54C-V BAT54C-V-GS18 or BAT54C-V-GS08 L43 Tape and reel BAT54S-V BAT54S-V-GS18 or BAT54S-V-GS08 L44 Tape and reel Parameter Test condition Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Forward continuous current IF 200 1) mA Repetitive peak forward current IFRM 300 1) mA Surge forward current current tp < 1 s IFSM 600 1) mA Power dissipation Ptot 230 mW Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air RthJA 430 1) K/W Junction temperature Tj 125 °C Storage temperature range Tstg - 65 to + 150 °C |
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