DCB010

No.1895-1/3

Features

•

Ideally suited for use in hybrid ICs because of very small-sized package.

•

Fast switching speed.

•

Small interterminal capacitance.

Specifications

Absolute Maximum Ratings at Tc=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Peak Reverse Voltage

VRM

85

V

Reverse Voltage

VR

80

V

Peak Forward Current

IFM

300

mA

IFM*

450

mA

Average Rectified Current

IO

100

mA

IO*

150

mA

Surge Current (1μs)

IFSM

4A

IFSM*

6A

Allowable Power Dissipation

P

200

mW

Junction Temperature

Tj

125

°C

Storage Temperature

Tstg

--55 to +125

°C

* : Total value

Electrical Characteristics at Tc=25°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

VF1

IF=1mA

0.60

V

Forward Voltage

VF2

IF=10mA

0.72

V

VF3

IF=100mA

1.20

V

Reverse Current

IR1

VR=30V

0.1

μA

IR2

VR=80V

0.5

μA

Marking: W6

Continued on next page.

SANYO Semiconductors

DATA SHEET

Ordering number : EN1895C

41509DH MS IM TC-00001938 / N0106 / 12000 GI IM / 2279TA, TS

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

device, the customer should always evaluate and test devices mounted in the customer

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DCB010

Silicon Epitaxial Planar Type (Cathode Common)

Very High-Speed Switching Diode