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Document Number 85509

Rev. 1.8, 23-Jul-10

BAS81, BAS82, BAS83

Vishay Semiconductors

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Thermal Characteristics

Electrical Characteristics

Typical Characteristics

Parameter

Test condition

Symbol

Value

Unit

Junction to ambient air

on PC board 50 mm x 50 mm x 1.6 mm

320

K/W

Junction temperature

125

°C

Storage temperature range

- 65 to + 150

°C

Parameter

Test condition

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

330

mV

410

mV

1000

mV

Reverse current

200

nA

Diode capacitance

1.6

pF

Figure 1. Max. Reverse Power Dissipation vs.

Junction Temperature

0

2

4

6

8

10

12

14

25

50

75

100

125

150

T

15794

V

R

- Limit at 100 %

P

P

Figure 2. Reverse Current vs. Junction Temperature

0.1

100

1000

25

50

75

100

125

150

1

10

15795