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BAS40-02V-V-G Datasheet(PDF) 2 Page - Vishay Siliconix |
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BAS40-02V-V-G Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 3 page www.vishay.com 2 Document Number 82391 Rev. 1.0, 14-Oct-10 BAS40-02V-V-G Vishay Semiconductors For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Electrical Characteristics Tamb = 25 °C, unless otherwise specified Package Dimensions in millimeters (inches): SOD-523 Parameter Test condition Symbol Min. Typ. Max. Unit Reverse breakdown voltage IR = 10 µA (pulsed) V(BR) 40 V Leakage current Pulse test VR = 30 V, tp < 300 µs IR 20 100 nA Forward voltage Pulse test tp < 300 µs, IF = 1 mA VF 380 mV Pulse test tp < 300 µs, IF = 40 mA, VF 1000 mV Diode capacitance VR = 0 V, f = 1 MHz CD 45 pF Reverse recovery time IF = 10 mA, IR = 10 mA, Irr = 1 mA, RL = 100 Ω trr 5ns foot print recommendation: Rev. h - Date: 13. Oct. 2010 16864 Document no.: S8-V-3880.02-001 (4) 1.45 (0.057) 0.35 (0.014) 1.3 (0.051) 1.1 (0.043) 1.7 (0.067) 1.5 (0.059) 0.9 (0.035) 0.7 (0.028) |
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