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115CNQ015ASM Datasheet(PDF) 1 Page - Vishay Siliconix |
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115CNQ015ASM Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 94126 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 16-Apr-10 1 Schottky Rectifier New Generation 3 D-61 Package, 2 x 55 A VS-115CNQ015A PbF Series Vishay High Power Products FEATURES • 125 °C TJ operation (VR < 5 V) • Center tap module • Optimized for OR-ing applications • Ultralow forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • New fully transfer-mold low profile, small footprint, high current package • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION The center tap Schottky rectifier module has been optimized for ultra low forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. PRODUCT SUMMARY IF(AV) 2 x 55 A VR at TJ = 100 °C 15 V Base common cathode Base common cathode Common cathode Anode 2 Anode 1 12 3 Common cathode Anode 2 Anode 1 12 3 Anode 2 Anode 1 1 3 D-61-8 VS-115CNQ015APbF VS-115CNQ015ASMPbF D-61-8-SM VS-115CNQ015ASLPbF D-61-8-SL MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 110 A VRRM 15 V IFSM tp = 5 μs sine 5050 A VF 55 Apk, TJ = 75 °C (per leg) 0.33 V TJ Range - 55 to 125 °C VOLTAGE RATINGS PARAMETER SYMBOL TEST CONDITIONS VS-115CNQ015APbF UNITS Maximum DC reverse voltage VR TJ = 100 °C 15 V Maximum working peak reverse voltage VRWM TJ = 125 °C 5 * Pb containing terminations are not RoHS compliant, exemptions may apply |
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