2SB1481 datasheet(1/2 Pages) ISC

Part #	2SB1481

Description	isc Silicon PNP Darlington Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

2SB1481

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -100V(Min)

·High DC Current Gain-

: hFE= 2000(Min)@ (VCE= -2V, IC= -1.5A)

·Low Collector Saturation Voltage-

: VCE(sat)= -1.5V(Max)@ (IC= -3A, IB= -6mA)

B

·Complement to Type 2SD2241

APPLICATIONS

·High power switching applications.

·Hammer drive, pulse motor drive applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-4

A

ICM

Collector Current-Pulse

-6

A

IB

Base Current-Continuous

-0.3

A

Collector Power Dissipation

@Ta=25℃

2

PC

Collector Power Dissipation

@TC=25℃

25

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

isc Website：www.iscsemi.cn

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