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110RKI80 Datasheet(PDF) 6 Page - Vishay Siliconix |
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110RKI80 Datasheet(HTML) 6 Page - Vishay Siliconix |
6 / 8 page www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 94379 6 Revision: 04-Nov-09 110RKI...PbF, 111RKI...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE 0.1 1 10 100 0.001 94379_09 Instantaneous Gate Current (A) 0.01 0.1 1 10 1000 100 (1) P GM = 12 W, tp = 5 ms (2) P GM = 30 W, tp = 2 ms (3) P GM = 60 W, tp = 1 ms (4) P GM = 200 W, tp = 300 μs Rectangular gate pulse (a) Recommended load line for rated dI/dt: 20 V, 30 Ω, t r ≤ 0.5 μs, tp ≥ 6 μs (b) Recommended load line for ≤ 30 % rated dI/dt: 15 V, 40 Ω, t r ≤ 1 μs, tp ≥ 6 μs (b) (a) V GD I GD (1) (2) (3) (4) Frequency limited by P G(AV) Device code 5 13 24 11 0 RKI 120 PbF 1 -IT(AV) rated average output current (rounded/10) 3 - Thyristor 4 - Voltage code x 10 = VRRM (see Voltage Ratings table) 5 - None = Standard production PbF = Lead (Pb)-free 2 - 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95003 |
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