2SB1255 datasheet(2/3 Pages) ISC

Part #	2SB1255

Description	Silicon PNP Darlington Power Transistors

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

2

Silicon PNP Darlington Power Transistors

2SB1255

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO

Collector-emitter voltage

IC=-30mA ; IB=0

-140

V

VCEsat

Collector-emitter saturation voltage

IC=-7A ;IB=-7mA

-2.5

V

VBEsat

Base-emitter saturation voltage

IC=-7A ;IB=-7mA

-3.0

V

ICBO

Collector cut-off current

VCB=-160V; IE=0

-100

μA

ICEO

Collector cut-off current

VCE=-140V; IB=0

-100

μA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-100

μA

hFE-1

DC current gain

IC=-1A ; VCE=-5V

2000

hFE -2

DC current gain

IC=-7A ; VCE=-5V

5000

30000

fT

Transition frequency

IC=0.5A ; VCE=-10V;f=1MHz

20

MHz

Switching times

ton

Turn-on time

1.0

μs

tstg

Storage time

1.5

μs

tf

Fall time

IC=-7A; VCC=-50V

IB1=-IB2=-7mA

1.2

μs

hFE-2 classifications

Q

P

5000-15000

8000-30000

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