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SWD4N65 Datasheet(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SWD4N65 Datasheet(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
1 / 7 page Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Features ■ High ruggedness ■ R DS(ON) (Max 2.6 Ω)@VGS=10V ■ Gate Charge (Typ 19nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. N-channel MOSFET Absolute maximum ratings Symbol Parameter Value Unit TO-251 V DSS Drain to Source Voltage 650 V I D Continuous Drain Current (@T C=25 oC) 4.0 A Continuous Drain Current (@T C=100 oC) 2.6 A I DM Drain current pulsed (note 1) 16 A V GS Gate to Source Voltage ± 30 V E AS Single pulsed Avalanche Energy (note 2) 143 mJ E AR Repetitive Avalanche Energy (note 1) 10.6 mJ dv/dt Peak diode Recovery dv/dt (note 3) 4.5 V/ns P D Total power dissipation (@T C=25 oC) 54 W Derating Factor above 25oC 0.43 W/oC T STG, TJ Operating Junction Temperature & Storage Temperature -55 ~ + 150 oC T L Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit Min. Typ. Max. R thjc Thermal resistance, Junction to case 2.3 oC/W R thja Thermal resistance, Junction to ambient 83 oC/W Mar. 2011. Rev. 2.0 1/7 BV DSS : 650V I D : 4.0A R DS(ON) : 2.6ohm 1 2 3 1. Gate 2. Drain 3. Source 1 2 3 1 2 3 TO-251 TO-252 SW4N65 SAMWIN Item Sales Type Marking Package Packaging 1 SW I 4N65 SW4N65 TO-251 TUBE 2 SW D 4N65 SW4N65 TO-252 REEL Order Codes |
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