2SB817 datasheet(2/4 Pages) ISC

Part #	2SB817

Description	Silicon PNP Power Transistors

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

2

Silicon PNP Power Transistors

2SB817

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=-50mA ;IB=0

-140

V

V(BR)CBO

Collector-base breakdown voltage

IC=-5mA ;IE=0

-160

V

V(BR)EBO

Emitter-base breakdown voltage

IE=-5mA ;IC=0

-6

V

VCEsat

Collector-emitter saturation voltage

IC=-5A ;IB=-0.5A

-1.1

V

VBE

Base-emitter on voltage

IC=-1A;VCE=-5V

-1.5

V

ICBO

Collector cut-off current

VCB=-80V; IE=0

-0.1

mA

IEBO

Emitter cut-off current

VEB=-4V; IC=0

-0.1

mA

hFE-1

DC current gain

IC=-1A ; VCE=-5V

60

200

hFE-2

DC current gain

IC=-6A ; VCE=-5V

20

fT

Transition frequency

IC=-1A ; VCE=-5V

15

MHz

COB

Collector output capacitance

IE=0;f=1MHz;VCB=10V

300

pF

Switching times

ton

Turn-on time

0.25

μs

tstg

Storage time

1.61

μs

tf

Fall time

IC=-1.0A IB1=-IB2=-0.1A

0.53

μs

hFE-1 Classifications

D

E

60-120

100-200

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