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2SB794 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB794 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB794 2SB795 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SB794 -60 V(BR)CEO Collector-emitter breakdown voltage 2SB795 IC=-10mA ;IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-1mA -1.5 V VBEsat Base-emitter saturation voltage IC=-1A ;IB=-1mA -2.0 V 2SB794 VCB=-60V; IE=0 ICBO Collector cut-off current 2SB795 VCB=-80V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.0 mA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 1000 hFE-2 DC current gain IC=-1A ; VCE=-2V 2000 30000 Switching times ton Turn-on time 0.5 μs tstg Storage time 1.0 μs tf Fall time IC=-1.0A ; IB1=-IB2=-1.0mA VCC=-50V;RL=50Ω 1.0 μs hFE-2 Classifications M L K 2000-5000 4000-10000 8000-30000 |
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