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2SB765 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB765 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB765 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -1.5A ·Complement to Type 2SD864 APPLICATIONS ·Medium speed and power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -6 A PC Collector Power Dissipation TC=25℃ 30 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn |
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