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2SB760 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB760 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB760 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A B -1.0 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V -1.3 V ICEO Collector Cutoff Current VCE= -60V; IB= 0 B -300 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1 mA hFE-1 DC Current Gain IC= -0.2A; VCE= -4V 40 250 hFE-2 DC Current Gain IC= -1A; VCE= -4V 15 hFE-1 Classifications R Q P 40-90 70-150 120-250 isc Website:www.iscsemi.cn 2 |
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