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2SB556 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB556 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB555 2SB556 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SB555 -140 V(BR)CEO Collector-emitter breakdown voltage 2SB556 IC=-0.1A ;IB=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-10mA ;IC=0 -5 V 2SB555 IC=-7A; IB=-0.7A VCEsat Collector-emitter saturation voltage 2SB556 IC=-6A; IB=-0.6A -3.0 V VBE Base-emitter on voltage IC=-7A ; VCE=-5V -2.5 V ICBO Collector cut-off current VCB=-50V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-2A ; VCE=-5V 40 140 COB Output capacitance IE=0 ; VCB=-10V; f=1.0MHz 330 pF fT Transition frequency IC=-2A ; VCE=-5V 6 MHz |
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