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2SB556 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2SB556
Description  Silicon PNP Power Transistors
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB556 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
2
Silicon PNP Power Transistors
2SB555 2SB556
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2SB555
-140
V(BR)CEO
Collector-emitter
breakdown voltage
2SB556
IC=-0.1A ;IB=0
-120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10mA ;IC=0
-5
V
2SB555
IC=-7A; IB=-0.7A
VCEsat
Collector-emitter
saturation voltage
2SB556
IC=-6A; IB=-0.6A
-3.0
V
VBE
Base-emitter on voltage
IC=-7A ; VCE=-5V
-2.5
V
ICBO
Collector cut-off current
VCB=-50V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE
DC current gain
IC=-2A ; VCE=-5V
40
140
COB
Output capacitance
IE=0 ; VCB=-10V; f=1.0MHz
330
pF
fT
Transition frequency
IC=-2A ; VCE=-5V
6
MHz


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