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Document Number: 93297

2

Revision: 03-Nov-10

VS-30WQ04FN-M3

Vishay Semiconductors

Schottky Rectifier, 3.5 A

Note

Note

(1)

thermal runaway condition for a diode on its own heatsink

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

See fig. 1

3 A

0.53

V

6 A

0.67

3 A

0.49

6 A

0.62

Maximum reverse leakage current

See fig. 2

2

mA

24

Threshold voltage

0.34

V

Forward slope resistance

37.33

m

Ω

Typical junction capacitance

189

pF

Typical series inductance

Measured lead to lead 5 mm from package body

5.0

nH

Maximum voltage rate of change

dV/dt

10 000

V/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and

storage temperature range

- 40 to 150

°C

Maximum thermal resistance,

junction to case

DC operation

See fig. 4

4.7

°C/W

Approximate weight

0.3

g

0.01

oz.

Marking device

Case style D-PAK (similar to TO-252AA)

30WQ04FN

dP

tot

dT

J

-------------

1

R

thJA

--------------

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