VS-30PT100

www.vishay.com

Vishay Semiconductors

Revision: 10-Aug-11

1

Document Number: 94532

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High Performance Generation 5.0 Schottky Rectifier, 30 A

FEATURES

• 175 °C high performance Schottky diode

• Very low forward voltage drop

• Extremely low reverse leakage

• Increased ruggedness for reverse avalanche

capability

• RBSOA available

• Negligible switching losses

• Submicron trench technology

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified according to JEDEC-JESD47

APPLICATIONS

• High efficiency SMPS

• Automotive

• High frequency switching

• Output rectification

• Reverse battery protection

• Freewheeling

• DC/DC systems

• Increased power density systems

PRODUCT SUMMARY

Package

TO-247AC modified

30 A

100 V

0.64 V

15 mA at 125 °C

175 °C

Diode variation

Single die

135 mJ

Base

cathode

2

13

Anode

Cathode

TO-247AC modified

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

100

V

0.61

Range

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VS-30PT100

UNITS

Maximum DC reverse voltage

100

V

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

30

A

Maximum peak one cycle

non-repetitive surge current

5 µs sine or 3 µs rect. pulse

Following any rated load

condition and with rated

2200

10 ms sine or 6 ms rect. pulse

450

Non-repetitive avalanche energy

135

mJ

Repetitive avalanche current

Limited by frequency of operation and time pulse duration so

See fig. 8

A