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30ETH06PBF Datasheet(PDF) 1 Page - Vishay Siliconix |
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30ETH06PBF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 94019 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Hyperfast Rectifier, 30 A FRED Pt® VS-30ETH06PbF Vishay Semiconductors FEATURES • Reduced Qrr and soft recovery • 175 °C TJ maximum • For PFC CRM/CCM operation • Low forward voltage drop • Low leakage current • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION/APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. PRODUCT SUMMARY Package TO-220AC IF(AV) 30 A VR 600 V VF at IF 2.60 V trr (typ.) See Recovery table TJ max. 175 °C Diode variation Single die Anode 1 3 2 Cathode Base cathode TO-220AC ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage VRRM 600 V Average rectified forward current IF(AV) TC = 103 °C 30 A Non-repetitive peak surge current IFSM TJ = 25 °C 200 Operating junction and storage temperatures TJ, TStg - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage VBR, VR IR = 100 μA 600 - - V Forward voltage VF IF = 30 A - 2.0 2.6 IF = 30 A, TJ = 150 °C - 1.34 1.75 Reverse leakage current IR VR = VR rated - 0.3 50 μA TJ = 150 °C, VR = VR rated - 60 500 Junction capacitance CT VR = 600 V - 33 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH |
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