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2N6673 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6673 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N6671 2N6672 2N6673 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N6671 300 2N6672 350 VCEO(SUS) Collector-emitter sustaining voltage 2N6673 IC=0.2A ;IB=0 400 V VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=8A ;IB=4A 2.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A 1.6 V 2N6671 VCE=450V; VBE(off)=-1.5V 2N6672 VCE=550V; VBE(off)=-1.5V ICEV Collector cut-off current 2N6673 VCE=650V; VBE(off)=-1.5V 0.1 mA IEBO Emitter cut-off current VEB=8V; IC=0 2.0 mA hFE DC current gain IC=5A ; VCE=3V 10 40 COB Output capacitance IE=0 ; VCB=10V;f=0.1MHz 300 pF fT Transition frequency IC=0.2A ; VCE=10V 15 60 MHz THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.17 ℃/W |
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