2N6673 datasheet(2/3 Pages) ISC

Part #	2N6673

Description	Silicon NPN Power Transistors

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

2

Silicon NPN Power Transistors

2N6671 2N6672 2N6673

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2N6671

300

2N6672

350

VCEO(SUS)

Collector-emitter

sustaining voltage

2N6673

IC=0.2A ;IB=0

400

V

VCEsat-1

Collector-emitter saturation voltage

IC=5A; IB=1A

1.0

V

VCEsat-2

Collector-emitter saturation voltage

IC=8A ;IB=4A

2.0

V

VBEsat

Base-emitter saturation voltage

IC=5A; IB=1A

1.6

V

2N6671

VCE=450V; VBE(off)=-1.5V

2N6672

VCE=550V; VBE(off)=-1.5V

ICEV

Collector cut-off current

2N6673

VCE=650V; VBE(off)=-1.5V

0.1

mA

IEBO

Emitter cut-off current

VEB=8V; IC=0

2.0

mA

hFE

DC current gain

IC=5A ; VCE=3V

10

40

COB

Output capacitance

IE=0 ; VCB=10V;f=0.1MHz

300

pF

fT

Transition frequency

IC=0.2A ; VCE=10V

15

60

MHz

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

1.17

℃/W

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