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www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94178 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-Feb-11 VS-30BQ015PbF Vishay Semiconductors Schottky Rectifier, 3.0 A Note (1) Pulse width < 300 μs, duty cycle < 2 % Notes (1) thermal runaway condition for a diode on its own heatsink (2) Mounted 1" square PCB ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop VFM (1) 3 A TJ = 25 °C 0.35 V 6 A 0.40 3 A TJ = 75 °C 0.30 6 A 0.35 Maximum reverse leakage current IRM (1) TJ = 25 °C VR = Rated VR 4 mA TJ = 100 °C 50 Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 1120 pF Typical series inductance LS Measured lead to lead 5 mm from package body 3.0 nH Maximum voltage rate of change dV/dt Rated VR 10 000 V/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range TJ (1) - 55 to 125 °C Maximum storage temperature range TStg - 55 to 150 Maximum thermal resistance, junction to lead RthJL (2) DC operation 12 °C/W Maximum thermal resistance, junction to ambient RthJA 46 Approximate weight 0.24 g 0.008 oz. Marking device Case style SMC (similar to DO-214AB) V3C dP tot dT J ------------- 1 R thJA -------------- < |
