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2N6471 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6471 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6470 2N6471 2N6472 DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area ・High gain at high current APPLICATIONS ・General-purpose types of switching and linear-amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6470 50 2N6471 70 VCBO Collector-base voltage 2N6472 Open emitter 90 V 2N6470 40 2N6471 60 VCEO Collector-emitter voltage 2N6472 Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A IB Base current 5 A PT Total power dissipation TC=25℃ 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.4 ℃/W Fig.1 simplified outline (TO-3) and symbol |
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