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 VISHAY
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Document Number: 94573 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 04-Jan-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 High Performance Schottky Generation 5.0, 20 A VS-20UT04, VS-20WT04FN Vishay Semiconductors Note •VF measured at 125 °C, connecting 2 anode pins FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability • RBSOA available • Negligible switching losses • Submicron trench technology • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Specific for PV cells bypass diode • High efficiency SMPS • High frequency switching • Output rectification • Reverse battery protection • Freewheeling • DC/DC systems • Increased power density systems PRODUCT SUMMARY Package D-PAK (TO-252AA), I-PAK (TO-251AA) IF(AV) 20 A VR 45 V VF at IF 0.53 V IRM max. 7 mA at 125 °C TJ max. 175 °C Diode variation Single die EAS 108 mJ I-PAK (TO-251AA) D-PAK (TO-252AA) VS-20UT04 VS-20WT04FN Base cathode Anode Anode 4, 2 3 1 Base cathode Anode Anode 4, 2 3 1 MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS VRRM 45 V VF 20 Apk, TJ = 125 °C (typical, measured connecting 2 anode pins) 0.480 V TJ Range - 55 to 175 °C VOLTAGE RATINGS PARAMETER SYMBOL TEST CONDITIONS VS-20UT04 VS-20WT04FN UNITS Maximum DC reverse voltage VR TJ = 25 °C 45 V |
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