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2N6287 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6287 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2N6285 2N6286 2N6287 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N6285 -60 2N6286 -80 VCEO(SUS) Collector-emitter sustaining voltage 2N6287 IC=-0.2A ;IB=0 -100 V VCEsat-1 Collector-emitter saturation voltage IC=-10A; IB=-40mA -2.0 V VCEsat-2 Collector-emitter saturation voltage IC=-20A ;IB=-200mA -3.0 V VBEsat Base-emitter saturation voltage IC=-20A ;IB=-200mA -4.0 V VBE Base-emitter on voltage IC=-10A ; VCE=-3V -2.8 V 2N6285 VCE=-30V; IB=0 2N6286 VCE=-40V; IB=0 ICEO Collector cut-off current 2N6287 VCE=-50V; IB=0 -1.0 mA 2N6285 VCE=-60V; VBE=-1.5V TC=150℃ -0.5 -5.0 2N6286 VCE=-80V; VBE=-1.5V TC=150℃ -0.5 -5.0 ICEX Collector cut-off current 2N6287 VCE=-100V; VBE=-1.5V TC=150℃ -0.5 -5.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.0 mA hFE-1 DC current gain IC=-10A ; VCE=-3V 750 18000 hFE-2 DC current gain IC=-20A ; VCE=-3V 100 COB Output capacitance IE=0; VCB=-10V;f=1MHz 600 pF |
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