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2N6287 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2N6287
Description  Silicon PNP Power Transistors
Download  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6287 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
2
Silicon PNP Power Transistors
2N6285 2N6286 2N6287
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N6285
-60
2N6286
-80
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6287
IC=-0.2A ;IB=0
-100
V
VCEsat-1
Collector-emitter saturation voltage
IC=-10A; IB=-40mA
-2.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=-20A ;IB=-200mA
-3.0
V
VBEsat
Base-emitter saturation voltage
IC=-20A ;IB=-200mA
-4.0
V
VBE
Base-emitter on voltage
IC=-10A ; VCE=-3V
-2.8
V
2N6285
VCE=-30V; IB=0
2N6286
VCE=-40V; IB=0
ICEO
Collector cut-off current
2N6287
VCE=-50V; IB=0
-1.0
mA
2N6285
VCE=-60V; VBE=-1.5V
TC=150℃
-0.5
-5.0
2N6286
VCE=-80V; VBE=-1.5V
TC=150℃
-0.5
-5.0
ICEX
Collector cut-off current
2N6287
VCE=-100V; VBE=-1.5V
TC=150℃
-0.5
-5.0
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-2.0
mA
hFE-1
DC current gain
IC=-10A ; VCE=-3V
750
18000
hFE-2
DC current gain
IC=-20A ; VCE=-3V
100
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
600
pF


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