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19MT050XFAPBF Datasheet(PDF) 1 Page - Vishay Siliconix |
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19MT050XFAPBF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Document Number: 94546 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 12-May-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 "Full Bridge" FREDFET MTP (Power MOSFET), 31 A 19MT050XFAPbF Vishay Semiconductors FEATURES • Low on-resistance • High performance optimized built-in fast recovery diodes • Fully characterized capacitance and avalanche voltage and current •Al2O3 DBC • Very low stray inductance design for high speed operation • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC BENEFITS • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness •Low trr and soft diode reverse recovery • Optimized for welding, UPS and SMPS applications • Outstanding ZVS and high frequency operation • Direct mounting to heatsink • PCB solderable terminals • Very low junction to case thermal resistance Notes (1) Repetitive rating; pulse width limited by maximum junction temperature (2) ISD ≤ 31 A, dI/dt ≤ 340 A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150 °C PRODUCT SUMMARY VDSS 500 V RDS(on) 0.25 Ω ID 31 A Type Modules - MOSFET Package MTP MTP ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Continuous drain current at VGS 10 V ID TC = 25 °C 31 A TC = 100 °C 19 Pulsed drain current IDM (1) 124 Maximum power dissipation PD TC = 25 °C 1140 W TC = 100 °C 456 Gate to source voltage VGS ± 30 V RMS isolation voltage VISOL Any terminal to case, t = 1 min 2500 Peak diode recovery dV/dt dV/dt (2) 15 V/ns Operating junction temperature range TJ - 55 to + 150 °C Operating storage temperature range TStg - 55 to + 125 °C |
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