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19MT050XFAPBF Datasheet(PDF) 1 Page - Vishay Siliconix

Part # 19MT050XFAPBF
Description  "Full Bridge" FREDFET MTP (Power MOSFET), 31 A
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

19MT050XFAPBF Datasheet(HTML) 1 Page - Vishay Siliconix

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Document Number: 94546
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 12-May-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
"Full Bridge" FREDFET MTP (Power MOSFET), 31 A
19MT050XFAPbF
Vishay Semiconductors
FEATURES
• Low on-resistance
• High
performance
optimized
built-in
fast
recovery diodes
• Fully characterized capacitance and avalanche voltage
and current
•Al2O3 DBC
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Low gate charge Qg results in simple drive requirement
• Improved gate, avalanche and dynamic dV/dt ruggedness
•Low trr and soft diode reverse recovery
• Optimized for welding, UPS and SMPS applications
• Outstanding ZVS and high frequency operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
Notes
(1) Repetitive rating; pulse width limited by maximum junction temperature
(2) ISD
≤ 31 A, dI/dt ≤ 340 A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150 °C
PRODUCT SUMMARY
VDSS
500 V
RDS(on)
0.25
Ω
ID
31 A
Type
Modules - MOSFET
Package
MTP
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Continuous drain current at VGS 10 V
ID
TC = 25 °C
31
A
TC = 100 °C
19
Pulsed drain current
IDM (1)
124
Maximum power dissipation
PD
TC = 25 °C
1140
W
TC = 100 °C
456
Gate to source voltage
VGS
± 30
V
RMS isolation voltage
VISOL
Any terminal to case, t = 1 min
2500
Peak diode recovery dV/dt
dV/dt (2)
15
V/ns
Operating junction temperature range
TJ
- 55 to + 150
°C
Operating storage temperature range
TStg
- 55 to + 125
°C


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