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Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2N6132 2N6133 2N6134 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N6132 -40 2N6133 -60 VCEO(SUS) Collector-emitter sustaining voltage 2N6134 IC=-0.1A ;IB=0 -80 V 2N6132 2N6133 -1.4 VCEsat Collector-emitter saturation voltage 2N6134 IC=-7A;IB=-1.2A -1.8 V VBE Base-emitter on voltage IC=-2.5A ; VCE=-4V -1.4 V 2N6132 VCE=-40V;VBE=1.5V TC=150℃ -0.5 -3.0 2N6133 VCE=-60V;VBE=1.5V TC=150℃ -0.5 -3.0 mA ICEV Collector cut-off current 2N6134 VCE=-80V; VBE=1.5V TC=150℃ -0.5 -3.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA hFE DC current gain IC=-2.5A ; VCE=-4V 20 100 fT Transition frequency IC=-0.2A ; VCE=-4V 2.5 MHz |
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