2N5660 datasheet(2/3 Pages) ISC

Part #	2N5660

Description	Silicon NPN Power Transistors

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

2

Silicon NPN Power Transistors

2N5660 2N5661

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2N5660

200

V(BR)CEO

Collector-emitter

breakdown voltage

2N5661

IC=10mA ; IB=0

300

V

V(BR)EBO

Emitter-base breakdown voltage

IE=10μA ; IC=0

6

V

VCEsat-1

Collector-emitter saturation voltage

IC=1A; IB=0.1A

0.4

V

VCEsat-2

Collector-emitter saturation voltage

IC=2A; IB=0.4A

0.8

V

VBEsat-1

Base-emitter saturation voltage

IC=1A ;IB=0.1A

1.2

V

VBEsat-2

Base-emitter saturation voltage

IC=2A; IB=0.4A

1.5

V

2N5660

VCE=200V;VBE(off)=1.5V

ICES

Collector cut-off current

2N5661

VCE=300V;VBE(off)=1.5V

0.2

mA

2N5660

VCB=250V; IE=0

ICBO

Collector cut-off current

2N5661

VCB=400V; IE=0

1.0

mA

2N5660

40

hFE-1

DC current gain

2N5661

IC=50mA ; VCE=2V

25

2N5660

40

120

hFE-2

DC current gain

2N5661

IC=0.5A ; VCE=5V

25

75

hFE-3

DC current gain

IC=1A ; VCE=5V

15

hFE-4

DC current gain

IC=2A ; VCE=5V

5

COB

Output capacitance

IE=0 ; VCB=10V;f=1MHz

45

pF

2N5660

VCC=100V;IC=0.5A;IB1=-IB2=15mA

ton

Turn-on time

2N5661

VCC=100V;IC=0.5A;IB1=-IB2=25mA

0.25

μs

2N5660

VCC=100V;IC=0.5A;IB1=-IB2=15mA

0.85

toff

Turn-off time

2N5661

VCC=100V;IC=0.5A;IB1=-IB2=25mA

1.2

μs

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