VS-10UT10, VS-10WT10FN

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Vishay Semiconductors

Revision: 10-Aug-11

1

Document Number: 94647

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High Performance Generation 5.0 Schottky Rectifier, 10 A

FEATURES

• 175 °C high performance Schottky diode

• Very low forward voltage drop

• Extremely low reverse leakage

• Increased ruggedness for reverse avalanche

capability

• RBSOA available

• Negligible switching losses

• Submicron trench technology

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified according to JEDEC-JESD47

APPLICATIONS

• High efficiency SMPS

• High frequency switching

• Output rectification

• Reverse battery protection

• Freewheeling

• DC/DC systems

• Increased power density systems

Note

PRODUCT SUMMARY

Package

I-PAK (TO-251AA),

D-PAK (TO-252AA)

10 A

100 V

0.66 V

4 mA at 125 °C

175 °C

Diode variation

Single die

54 mJ

I-PAK (TO-251AA)

D-PAK (TO-252AA)

VS-10UT10

VS-10WT10FN

Base

cathode

Anode

Anode

Cathode

4

3

2

1

Base

cathode

Anode

Anode

Cathode

4

3

2

1

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

100

V

0.615

V

Range

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VS-10UT10

VS-10WT10FN

UNITS

Maximum DC reverse voltage

100

V

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

10

A

Maximum peak one cycle

non-repetitive surge current

5 μs sine or 3 μs rect. pulse

Following any rated load

condition and with rated

610

A

10 ms sine or 6 ms rect. pulse

110

Non-repetitive avalanche energy

54

mJ

Repetitive avalanche current

Limited by frequency of operation and time pulse duration

(see fig. 8)

A