Electronic Components Datasheet Search |
|
10WT10FNTRL Datasheet(PDF) 1 Page - Vishay Siliconix |
|
10WT10FNTRL Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page VS-10UT10, VS-10WT10FN www.vishay.com Vishay Semiconductors Revision: 10-Aug-11 1 Document Number: 94647 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Performance Generation 5.0 Schottky Rectifier, 10 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability • RBSOA available • Negligible switching losses • Submicron trench technology • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 APPLICATIONS • High efficiency SMPS • High frequency switching • Output rectification • Reverse battery protection • Freewheeling • DC/DC systems • Increased power density systems Note (1) Measured connecting 2 anode pins PRODUCT SUMMARY Package I-PAK (TO-251AA), D-PAK (TO-252AA) IF(AV) 10 A VR 100 V VF at IF 0.66 V IRM max. 4 mA at 125 °C TJ max. 175 °C Diode variation Single die EAS 54 mJ I-PAK (TO-251AA) D-PAK (TO-252AA) VS-10UT10 VS-10WT10FN Base cathode Anode Anode Cathode 4 3 2 1 Base cathode Anode Anode Cathode 4 3 2 1 MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS VRRM 100 V VF 10 Apk, TJ = 125 °C (typical) 0.615 V TJ Range - 55 to 175 °C VOLTAGE RATINGS PARAMETER SYMBOL TEST CONDITIONS VS-10UT10 VS-10WT10FN UNITS Maximum DC reverse voltage VR TJ = 25 °C 100 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current IF(AV) 50 % duty cycle at TC = 159 °C, rectangular waveform 10 A Maximum peak one cycle non-repetitive surge current IFSM 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied (1) 610 A 10 ms sine or 6 ms rect. pulse 110 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 3 A, L = 12 mH 54 mJ Repetitive avalanche current IAR Limited by frequency of operation and time pulse duration so that TJ < TJ max. IAS at TJ max. as a function of time pulse (see fig. 8) IAS at TJ max. A |
Similar Part No. - 10WT10FNTRL |
|
Similar Description - 10WT10FNTRL |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |