1N5059_10 datasheet(2/4 Pages) VISHAY

Part #	1N5059

Description	Standard Avalanche Sinterglass Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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1N5059, 1N5060, 1N5061,1N5062

Standard Avalanche Sinterglass

Diode

Vishay Semiconductors

Document Number: 86000

For technical questions within your region, please contact one of the following:

www.vishay.com

Rev. 1.6, 25-Aug-10

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

139

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature

Fig. 2 - Max. Reverse Current vs. Junction Temperature

Fig. 3 - Max. Average Forward Current vs. Ambient Temperature

Fig. 4 - Max. Forward Current vs. Forward Voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX

UNIT

Forward voltage

IF = 1 A

VF

--

1

V

IF = 2.5 A

VF

-

1.15

V

Reverse current

VR = VRRM

IR

--

1

μA

VR = VRRM, Tj = 100 °C

IR

-

10

μA

VR = VRRM, Tj = 150 °C

IR

-

100

μA

Breakdown voltage

IR = 100 μA

1N5059

V(BR)R

225

-

1600

V

1N5060

V(BR)R

450

-

1600

V

1N5061

V(BR)R

650

-

1600

V

1N5062

V(BR)R

900

-

1600

V

Diode capacitance

VR = 0 V, f = 1 MHz

CD

-40

-

pF

Reverse recovery time

IF = 0.5 A, IR = 1 A, iR = 0.25 A

trr

--

4

μs

0

40

80

120

160

200

25

50

75

100

125

150

175

Tj - Junction Temperature (

°C)

15764

VR =VRRM

160 K/W

100 K/W

45 K/W

RthJA =

1N5062

1N5061

1N5060

1N5059

0.1

1

10

100

1000

15765

VR =VRRM

25

50

75

100

125

150

175

Tj - Junction Temperature (

°C)

15763_1

VR =VRRM

half sinewave

RthJA=45 K/W

l =10 mm

RthJA= 100 K/W

PCB:d=25mm

020406080 100 120 140 160 180

Tamb - Ambient Temperature (°C)

0.0

1.0

1.5

2.0

2.5

3.0

0.5

0

0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0

VF - Forward Voltage(V)

15762

Tj =25

°C

Tj =175

°C

0.01

0.1

1

10

100

0.001

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