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DRV8803 Datasheet(PDF) 9 Page - Texas Instruments |
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DRV8803 Datasheet(HTML) 9 Page - Texas Instruments |
9 / 15 page P = R DS(ON) · (I ) OUT 2 DRV8803 www.ti.com SLVSAW5A – JULY 2011 – REVISED JULY 2011 THERMAL INFORMATION Thermal Protection The DRV8803 has thermal shutdown (TSD) as described above. If the die temperature exceeds approximately 150 °C, the device will be disabled until the temperature drops to a safe level. Any tendency of the device to enter TSD is an indication of either excessive power dissipation, insufficient heatsinking, or too high an ambient temperature. Power Dissipation Power dissipation in the DRV8803 is dominated by the power dissipated in the output FET resistance, or RDS(ON). Average power dissipation of each FET when running a static load can be roughly estimated by Equation 1: (1) where P is the power dissipation of one FET, RDS(ON) is the resistance of each FET, and IOUT is equal to the average current drawn by the load. Note that at start-up and fault conditions this current is much higher than normal running current; these peak currents and their duration also need to be taken into consideration. When driving more than one load simultaneously, the power in all active output stages must be summed. The maximum amount of power that can be dissipated in the device is dependent on ambient temperature and heatsinking. Note that RDS(ON) increases with temperature, so as the device heats, the power dissipation increases. This must be taken into consideration when sizing the heatsink. Heatsinking The DRV8803 package uses a standard SOIC outline, but has the center pins internally fused to the die pad in order to more efficiently remove heat from the device. The two center leads on each side of the package should be connected together to as large a copper area on the PCB as is possible to remove heat from the device. If the copper area is on the opposite side of the PCB from the device, thermal vias are used to transfer the heat between top and bottom layers. In general, the more copper area that can be provided, the more power can be dissipated. Copyright © 2011, Texas Instruments Incorporated Submit Documentation Feedback 9 Product Folder Link(s): DRV8803 |
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