SiHP30N60E

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Vishay Siliconix

S11-2091 Rev. C, 31-Oct-11

4

Document Number: 91456

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10 - Temperature vs. Drain-to-Source Voltage

V

1

10

100

1000

10 000

0

100

200

300

400

500

600

V

C

C

C

C

iss

C

rss

C

oss

0

4

8

12

16

20

24

0

25

50

75

100

125

150

Q

I

0.001

0.01

0.1

1

10

100

1000

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

V

T

T

V

* V

Single Pulse

Operation in this area limited

1 ms

10 ms

100 µs

1000

1

10

100

1

10

100

1000

0.1

5.0

10.0

15.0

20.0

25.0

30.0

25

50

75

100

125

150

T

0

T

550

575

600

625

650

675

700

725

- 60 - 40 - 20

0

20

40

60

80 100 120 140 160