SIHG30N60E-GE3 datasheet(1/8 Pages) VISHAY

Part #	SIHG30N60E-GE3

Description	E Series Power MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SiHG30N60E

www.vishay.com

Vishay Siliconix

S11-2091 Rev. C, 31-Oct-11

1

Document Number: 91455

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

E Series Power MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Low Figure-of-Merit (FOM) Ron x Qg

• Low Input Capacitance (Ciss)

• Reduced Switching and Conduction Losses

• Ultra Low Gate Charge (Qg)

• Avalanche Energy Rated (UIS)

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Server and Telecom Power Supplies

• Switch Mode Power Supplies (SMPS)

• Power Factor Correction Power Supplies (PFC)

•Lighting

- High-Intensity Discharge (HID)

- Fluorescent Ballast Lighting

- LED Lighting

• Industrial

- Welding

- Induction Heating

- Motor Drives

• Battery Chargers

• Renewable Energy

- Solar (PV Inverters)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 7 A.

c. 1.6 mm from case.

d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C.

PRODUCT SUMMARY

VDS (V) at TJ max.

650

RDS(on) max. at 25 °C ()VGS = 10 V

0.125

Qg max. (nC)

130

Qgs (nC)

15

Qgd (nC)

39

Configuration

Single

N-Channel MOSFET

G

D

S

TO-247AC

G

D

S

ORDERING INFORMATION

Package

TO-247AC

Lead (Pb)-free and Halogen-free

SiHG30N60E-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

600

V

Gate-Source Voltage

VGS

± 20

Gate-Source Voltage AC (f > 1 Hz)

30

Continuous Drain Current (TJ = 150 °C)

VGS at 10 V

TC = 25 °C

ID

29

A

TC = 100 °C

18

Pulsed Drain Currenta

IDM

65

Linear Derating Factor

2W/°C

Avalanche Energy (repetitive)

EAR

0.25

mJ

Single Pulse Avalanche Energyb

EAS

690

Maximum Power Dissipation

PD

250

W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Drain-Source Voltage Slope

TJ = 125 °C

dV/dt

37

V/ns

Reverse Diode dV/dtd

18

Soldering Recommendations (Peak Temperature)

for 10 s

300c

°C

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