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SIHB24N65E-GE3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIHB24N65E-GE3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page SiHB24N65E www.vishay.com Vishay Siliconix S11-2088 Rev. B, 31-Oct-11 2 Document Number: 91477 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Maximum Junction-to-Case (Drain) RthJC -0.5 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 650 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 250 μA -0.72 - V/°C Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 650 V, VGS = 0 V - - 1 μA VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 10 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 12 A - 0.120 0.145 Forward Transconductance gfs VDS = 8 V, ID = 5 A - 7.1 - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 100 V, f = 1 MHz - 2740 - pF Output Capacitance Coss - 122 - Reverse Transfer Capacitance Crss -4 - Total Gate Charge Qg VGS = 10 V ID = 24 A, VDS = 520 V - 81 122 nC Gate-Source Charge Qgs -21 - Gate-Drain Charge Qgd -37 - Turn-On Delay Time td(on) VDD = 520 V, ID = 24 A, VGS = 10 V, Rg = 9.1 -24 48 ns Rise Time tr - 84 126 Turn-Off Delay Time td(off) - 70 105 Fall Time tf - 69 104 Gate Input Resistance Rg f = 1 MHz, open drain - 0.68 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 24 A Pulsed Diode Forward Current ISM -- 96 Diode Forward Voltage VSD TJ = 25 °C, IS = 24 A, VGS = 0 V - - 1.2 V Reverse Recovery Time trr TJ = 25 °C, IF = IS = 24 A, dI/dt = 100 A/μs, VR = 20 V - 517 - ns Reverse Recovery Charge Qrr -9.7 - μC Reverse Recovery Current IRRM -30 - A S D G |
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