SIHB24N65E-GE3 datasheet(2/8 Pages) VISHAY

Part #	SIHB24N65E-GE3

Description	E Series Power MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SiHB24N65E

www.vishay.com

Vishay Siliconix

S11-2088 Rev. B, 31-Oct-11

2

Document Number: 91477

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar

product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-62

°C/W

Maximum Junction-to-Case (Drain)

RthJC

-0.5

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

650

-

V

VDS Temperature Coefficient

V

DS/TJ

Reference to 25 °C, ID = 250 μA

-0.72

-

V/°C

Gate-Source Threshold Voltage (N)

VGS(th)

VDS = VGS, ID = 250 μA

2

-

4

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 650 V, VGS = 0 V

-

1

μA

VDS = 520 V, VGS = 0 V, TJ = 125 °C

-

10

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 12 A

-

0.120

0.145



Forward Transconductance

gfs

VDS = 8 V, ID = 5 A

-

7.1

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 100 V,

f = 1 MHz

-

2740

-

pF

Output Capacitance

Coss

-

122

-

Reverse Transfer Capacitance

Crss

-4

-

Total Gate Charge

Qg

VGS = 10 V

ID = 24 A, VDS = 520 V

-

81

122

nC

Gate-Source Charge

Qgs

-21

-

Gate-Drain Charge

Qgd

-37

-

Turn-On Delay Time

td(on)

VDD = 520 V, ID = 24 A,

VGS = 10 V, Rg = 9.1 

-24

48

ns

Rise Time

tr

-

84

126

Turn-Off Delay Time

td(off)

-

70

105

Fall Time

tf

-

69

104

Gate Input Resistance

Rg

f = 1 MHz, open drain

-

0.68

-



Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

24

A

Pulsed Diode Forward Current

ISM

--

96

Diode Forward Voltage

VSD

TJ = 25 °C, IS = 24 A, VGS = 0 V

-

1.2

V

Reverse Recovery Time

trr

TJ = 25 °C, IF = IS = 24 A,

dI/dt = 100 A/μs, VR = 20 V

-

517

-

ns

Reverse Recovery Charge

Qrr

-9.7

-

μC

Reverse Recovery Current

IRRM

-30

-

A

S

D

G

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