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BQ500210RGZT Datasheet(PDF) 3 Page - Texas Instruments

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Part # BQ500210RGZT
Description  Qi Compliant Wireless Power Transmitter Manager
Download  25 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

BQ500210RGZT Datasheet(HTML) 3 Page - Texas Instruments

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SLUSAL8A
– JUNE 2011 – REVISED AUGUST 2011
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION(1)
OPERATING
TOP SIDE
TEMPERATURE
ORDERABLE PART NUMBER
PIN COUNT
SUPPLY
PACKAGE
MARKING
RANGE, TA
bq500210RGZR
48 pin
Reel of 2500
QFN
bq500210
-40
°C to 110°C
bq500210RGZT
48 pin
Reel of 250
QFN
bq500210
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
(1)
over operating free-air temperature range (unless otherwise noted)
VALUE
UNIT
MIN
MAX
Voltage applied at V33D to DGND
–0.3
3.8
V
Voltage applied at V33A to AGND
–0.3
3.8
V
Voltage applied to any pin (2)
–0.3
3.8
V
Storage temperature,TSTG
–40
150
°C
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltages referenced to GND.
THERMAL INFORMATION
bq500210
THERMAL METRIC(1)
RGZ
UNITS
48 PINS
θJA
Junction-to-ambient thermal resistance(2)
28.4
θJC(top)
Junction-to-case(top) thermal resistance (3)
13.9
θJB
Junction-to-board thermal resistance (4)
5.3
°C/W
ψJT
Junction-to-top characterization parameter (5)
0.2
ψJB
Junction-to-board characterization parameter (6)
5.2
θJC(bottom)
Junction-to-case(bottom) thermal resistance (7)
1.4
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2)
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3)
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific
JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4)
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(5)
The junction-to-top characterization parameter,
ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining
θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6)
The junction-to-board characterization parameter,
ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining
θJA , using a procedure described in JESD51-2a (sections 6 and 7).
(7)
The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
Copyright
© 2011, Texas Instruments Incorporated
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